MBE and STM have been premier instruments in surface science research since last two-three decades.Molecular beam epitaxy (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho. Molecular beam epitaxy takes place in Ultra High Vacuum (UHV~10-10 mbar) . The most important aspect of MBE is the slow deposition rate (typically less than 1000 nm per hour), which allows the films to grow epitaxially.
MBE-STM at IOPB