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Institute of Physics, Bhubaneswar

An Autonomous Research Institute of Department of Atomic Energy, Govt. of India

  Member of Institute of Physics

Parlapalli V. Satyam


Parlapalli V. Satyam
Selected previous associations :
  • Ph.D. from Institute of Physics, Bhubaneswar, India

  • Post doctoral fellow (Advanced Photon Source, Argonne National Lab., USA),

  • JSPS Fellow (Japanese Science )

  • Visiting Scientist (Nagoya University, Japan) - 2004, 2007

  • Visiting Scientist (National Taiwan University, Taiwan) - 2008

  • Visiting Scientist (NCKU, Tainan, Taiwan) - 2009

  • Guest Scientist (University of Bremen, Bremen, Germany) - on Sabbatical leave since June 14, 2010 (for one year)
Date of joining :04/02/1999
Working group: : Experimental Condensed Matter Physics (Atomic Scale Physics at Surfaces and Interface
Areas of interest :
    Structural Studies from Low Dimensional System (Nanoscale), clean Surface and Interfaces, Experimental techniques associated with: Electron Microscopy (HRTEM, in-situ TEM, EELS (TEM), FEGSEM - FIB, MBE (UHV Growth), STM, X-Ray methods (XRD, XRR, XSW and using Synchrotron radiation), Ion Scattering methods and Ion implantation); Fundamental and Applied research in Nanoscience and Nanotechnology.
Selected publications :
  • Temperature dependent electron microscopy study of Au thin films on Si (100) with and without native oxide layer as barrier at the interface, A. K. Rath et al., J. of Physics D: Applied Physics (Accepted) (2011)
  • Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si (110) substrates, U. M. Bhatta et al., Nanotechnology 20 (2009) 465601
  • Formation of aligned nanosilicide structures in a MBE-grown Au/Si(110) system: a real-time temperature-dependent TEM study, Bhatta et al., Journal of Physics: Condensed Matter 21 (2009) 205403
  • Flux dependent MeV self-ion-induced effects on Au nanostructures: dramatic mass transport and nanosilicide formation, J. Ghatak et al., Nanotechnology 19 (2008) 325602
  • Ion-beam-induced enhanced diffusion from gold thin films in silicon, J. Ghatak et al., Journal of Physics: Condensed Matter 20 (2008) 485008
Contacts :
Office : R.N. 102,Extension Building 1
E-mail :
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